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| Power Transistor Array STA461C Absolute Maximum Ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings 655 655 6 6 (pulse 10) 1 3.2 (Ta = 25C) 18 (Tc = 25C) 150 -55 to +150 Unit V V V A A W W C C Electrical Characteristics Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min 0.2 0.2 9.0 0.2 (Ta=25C) Unit A A V V V mJ External Dimensions STA4 (LF400B) 25.25 0.2 b a 11.3 4.7 0.5 2.3 1.0 0.25 0.5 0.15 (2.54) Typical Switching Characteristics VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 30 IB2 (mA) -30 ton (s) 0.2 t stg (s) 3.9 tf (s) 0.2 C1.5 0.5 9* 2.54=22.86 0.05 0.15 0.2 1234 BCE 5 6 7 8 9 10 BCE a) Type No. b) Lot No. (Unit: mm) s IC -- VCE Characteristics (typ.) 7 6 5 30mA 20mA 10mA s VCE (sat) -- IC Temperature Characteristics (typ.) 0.75 IC/ IB = 100 s IC -- VBE Temperature Characteristics (typ.) 6 5 (VCE = 1V) VCE (sat) (V) 0.5 Ta = -55C 25C 75C 125C 4 IC (A) 5mA 3mA IC (A) 4 3 2 1 0 3 2 1 Ta = 125C 75C 25C -55C 0.25 IB = 1mA 0 1 2 3 4 5 0 0.01 0 0.1 1 10 0 0.5 1.0 1.5 VCE (V) IC (A) VBE (V) s hFE -- IC Temperature Characteristics (typ.) 2000 1000 500 (VCE = 1V) s ton* tstg*tf -- IC Characteristics 5 s j-a -- t Characteristics Single pulse 10 tstg 5 ton*tstg*tf (S) 1 0.5 VCC = 12V IB1 = -IB2 = 30mA (C/W) 1 0.5 hFE 100 50 0.01 0.1 Ta = 125C 75C 25C -55C tf 0.1 j-a ton 0 1 2 3 0.1 0.05 0.1 1 10 100 2000 1 10 IC (A) Ic (A) t (ms) s Safe Operating Area (single pulse) 20 s PT -- Ta Derating 20 Equivalent Circuit Diagram 10 5 10m s 15 3 PT (W) IC (A) 10 1 0.5 Without heatsink natural air cooling 2 5 Withou t heat sink 7 4 100 150 0.1 1 5 10 50 100 0 0 50 VCE (V) Ta (C) 0.5 8 9 1.2 4.0 0.2 s 0.5m 1m s ith W ite fin in nk si at he 65 |
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